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Details for article 966 of 6539 found articles
| Title: |
Deep level defects in sublimation-grown 6H silicon carbide investigated by DLTS and EPR |
| Author: |
Irmscher, K. Pintilie, I. Pintilie, L. Schulz, D. |
| Appeared in: |
Physica. B, Condensed matter |
| Paging: | Volume 308-310 (2001) nr. C pages 4 p. |
| Year: |
2001 |
| Contents: | |
| Publisher: |
Elsevier Science B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 966 of 6539 found articles
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